Beryllium oxide ceramics offer many benefits over competing materials. They can be nine times more thermally conductive than aluminum nitride (AlN) ceramic, a commonly used alternative. Additionally, BeO has a thermal conductivity of up to 325 W/(m•K), meaning beryllia can be up to 80 percent more thermally conductive than AlN materials. Beryllium oxide ceramic is more chemically stable than AlN ceramics in environments containing oxidizing chemicals.
High strength over a wide temperature range
High hardness
Low friction coefficient
Excellent wear resistance
Good heat resistance
High operating temperature
Good chemical resistance
Parameter | Unit | Value | |
Density | g / cm3 | ≥2.85 | |
BeO purity | % | ≥99 | |
Bending strength | MPa | ≥170 | |
Linear expansion coefficient | 20℃-500%℃ | × 10 ⁻⁴ /℃ | 7-8.5 |
Thermal conductivity | 40℃ | W / m ∙ ° K | ≥250 |
Specific heat | 25℃ | J / Kg ° C | 720 |
Dielectric constant | 1MHz 20℃ | 6.5-7.5 | |
10GHz 20℃ | 6.5-7.5 | ||
Dielectric loss tangent | 1 MHz 20℃ | × 10 ⁻⁴ | ≤4 |
10 GHz 20℃ | × 10 ⁻⁴ | ≤8 | |
Resistivity | 100℃ | Ω cm | ≥1013 |
300℃ | Ω cm | ≥1010 | |
Dielectric strength | DC | KV / mm | ≥15 |
Chemical stability | 1: 9HCl | μg / cm² | ≤0.3 |
10% NaOH | μg / cm² | ≤0.2 | |
Maximum working temperature | ℃ | 1800 |
The beryllium oxide ceramic is widely used in high-power microwave devices , electronics packaging component, power electronic device, power thick film hybrid integrated circuit , electro vacuum technology, nuclear technology and so on.
Our beryllium oxide ceramic are exported to USA, Canada, Europe, and South America and Southeast Asia.
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